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| Directed Energy, Inc. An DE275-102N06A RF Power MOSFET Preliminary Data Sheet IXYS Company N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDHS PDAMB RthJHS TJ TJM Tstg TL Weight Symbol Test Conditions Characteristic Values TJ = 25C unless otherwise specified 1.6mm (0.063 in) from case for 10 s VDSS ID25 RDS(on) PDHS Maximum Ratings 1000 1000 20 30 6 48 6 20 5 >200 375 3.0 0.33 -55...+150 150 -55...+150 300 2 V V V V A A A mJ V/ns V/ns W W K/W C C C C g Features SG1 SG2 GATE = = = = 1000 V 6A 2.0 375 W Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient Tc = 25C Tc = 25C, pulse width limited by TJM Tc = 25C Tc = 25C IS IDM, di/dt 100A/s, VDD VDSS, Tj 150C, RG = 0.2 IS = 0 Tc = 25C Derate 3.0W/C above 25C Tc = 25C DRAIN SD1 SD2 * Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power * * - - * * * cycling capability IXYS advanced low Qg process easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Low gate charge and capacitances min. VDSS VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 3 ma VDS = VGS, ID = 4 ma VGS = 20 VDC, VDS = 0 VDS = 0.8 VDSS TJ = 25C TJ = 125C VGS = 0 VGS = 15 V, ID = 0.5ID25 Pulse test, t 300S, duty cycle d 2% VDS = 15 V, ID = 0.5ID25, pulse test typ. max. V 5.5 100 V nA Advantages 1000 2.5 * Optimized for RF and high speed switching at frequencies to 100MHz * Easy to mount--no insulators needed * High power density 50 A 1 mA 2.5 2 6 S Directed Energy, Inc. An DE275-102N06A RF Power MOSFET IXYS Company Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) min. typ. 0.3 1800 VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz Symbol max. pF pF pF ns ns ns ns nC nC nC RG Ciss Coss Crss Td(on) Ton Td(off) Toff Qg(on) Qgs Qgd Source-Drain Diode Symbol IS ISM VSD Trr QRM IRM IF = IS, -di/dt = 100A/s, VR = 100V VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 (External) 100 30 3 2 4 5 50 20 30 Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. 6 48 1.5 200 0.6 4 Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle 2% A A V ns C A Directed Energy, Inc. reserves the right to change limits, test conditions and dimensions. DEI MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 5,034,796 5,381,025 4,850,072 5,049,961 5,640,045 4,881,106 5,063,307 4,891,686 5,187,117 4,931,844 5,237,481 5,017,508 5,486,715 Directed Energy, Inc. An DE275-102N06A RF Power MOSFET IXYS Company 102N06A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. 10 DRAIN Ld 4 Rd Lg 20 GATE Doff Roff D1crs D2crs 5 Ron Don 6 8 1 M3 3 Dcos Rds 2 7 Ls 30 SOURCE Figure 1 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the DEI web site at www.directedenergy.com/spice.htm Net List: *SYM=POWMOSN .SUBCKT 102N06A 10 20 30 * TERMINALS: D G S * 1000 Volt 6 Amp 2.0 Ohm N-Channel Power MOSFET M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 .5 DON 6 2 D1 ROF 5 7 1.0 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 1.9N RD 4 1 1.7 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .5N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=4 KP=2.3) .MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.2 TT=1N) .MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.6 VJ=.6 TT=1N RS=10M) .MODEL D3 D (IS=.5F CJO=400P BV=1000 M=.35 VJ=.6 TT=400N RS=10M) .ENDS Doc #9200-0221 Rev 1 (c) 2001 Directed Energy, Inc. Directed Energy, Inc. An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: deiinfo@directedenergy.com Web: http://www.directedenergy.com |
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